• DocumentCode
    1430331
  • Title

    High-voltage AlGaN/GaN HFETs by using graded gate field plates

  • Author

    Deguchi, Tadayoshi ; Kamada, A. ; Yamashita, Masaru ; Tomita, Hiroki ; Arai, Manabu ; Yamasaki, Kazuhiko ; Egawa, T.

  • Author_Institution
    Technol. Dev. Headquarters, New Japan Radio Co. Ltd., Fujimino, Japan
  • Volume
    48
  • Issue
    2
  • fYear
    2012
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    High-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) with graded gate field-plate (FP) structures were fabricated to investigate the effectiveness of a linearly graded FP structure on current collapse. To improve the reproducibility of the FP structure manufacturing process, a simple process for a linearly graded SiO2 profile formation was developed. A HFET with a 23°-angle FP exhibited a significantly decreased on-resistance increase ratio of 1.16 after application of a drain bias of 600°V.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; plates (structures); AlGaN-GaN; graded gate field plates; heterostructure field-effect transistors; high-voltage AlGaN/GaN HFET; voltage 600 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3171
  • Filename
    6138375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1430331