Title :
High-voltage AlGaN/GaN HFETs by using graded gate field plates
Author :
Deguchi, Tadayoshi ; Kamada, A. ; Yamashita, Masaru ; Tomita, Hiroki ; Arai, Manabu ; Yamasaki, Kazuhiko ; Egawa, T.
Author_Institution :
Technol. Dev. Headquarters, New Japan Radio Co. Ltd., Fujimino, Japan
Abstract :
High-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) with graded gate field-plate (FP) structures were fabricated to investigate the effectiveness of a linearly graded FP structure on current collapse. To improve the reproducibility of the FP structure manufacturing process, a simple process for a linearly graded SiO2 profile formation was developed. A HFET with a 23°-angle FP exhibited a significantly decreased on-resistance increase ratio of 1.16 after application of a drain bias of 600°V.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; plates (structures); AlGaN-GaN; graded gate field plates; heterostructure field-effect transistors; high-voltage AlGaN/GaN HFET; voltage 600 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3171
