DocumentCode
1430337
Title
Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs´ I-V characteristics
Author
Chu, C.-L. ; Hu, C.-M. ; Gong, J. ; Huang, C.-F. ; Tsai, C.-L. ; Chen, F.-Y. ; Liou, R.-H. ; Tuan, H.-C.
Author_Institution
Analog/Power & Specialty Technol. Div., TSMC, Hsinchu, Taiwan
Volume
48
Issue
2
fYear
2012
Firstpage
110
Lastpage
111
Abstract
In this reported work, a decrease in saturation current with increasing drain voltage in a 30 V asymmetric DEMOSFET biased at medium gate voltage was observed. The change in parasitic junction field-effect transistor (JFET) resistance for different gate and drain voltages is used to explain this phenomenon. The JFET resistance is increased with increasing drain voltage, which causes the saturated drain current to decrease and exhibits a negative dynamic output resistance. Careful design of the drift region doping profile can reduce the JFET resistance and relieve the output resistance issue without affecting the breakdown voltage.
Keywords
MOSFET; junction gate field effect transistors; I-V characteristics; asymmetric DEMOSFET; high-voltage drain-extended MOSFET; junction field-effect transistor; parasitic JFET resistance; voltage 30 V; voltage-dependent drift region resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3286
Filename
6138376
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