Title :
Gigacount/second photon detection with InGaAs avalanche photodiodes
Author :
Patel, K.A. ; Dynes, J.F. ; Sharpe, A.W. ; Yuan, Z.L. ; Penty, Richard V. ; Shields, A.J.
Author_Institution :
Cambridge Res. Lab., Toshiba Res. Eur. Ltd., Cambridge, UK
Abstract :
High count rate single photon detection at telecom wavelengths has been demonstrated using a thermoelectrically-cooled semiconductor diode. The device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a tunable self-differencing circuit for enhanced detection sensitivity. The count rate is linear with the photon flux in the single photon detection regime over approximately four orders of magnitude, and saturates at 1 gigacount/s at high photon fluxes. This result highlights promising potential for APDs in high-bit-rate quantum information applications.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; APD; InGaAs; avalanche photodiodes; detection sensitivity; frequency 2 GHz; gigacount-second photon detection; high-bit-rate quantum information applications; photon flux; telecom wavelengths; thermoelectrically-cooled semiconductor diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3265