• DocumentCode
    1430341
  • Title

    Gigacount/second photon detection with InGaAs avalanche photodiodes

  • Author

    Patel, K.A. ; Dynes, J.F. ; Sharpe, A.W. ; Yuan, Z.L. ; Penty, Richard V. ; Shields, A.J.

  • Author_Institution
    Cambridge Res. Lab., Toshiba Res. Eur. Ltd., Cambridge, UK
  • Volume
    48
  • Issue
    2
  • fYear
    2012
  • Firstpage
    111
  • Lastpage
    113
  • Abstract
    High count rate single photon detection at telecom wavelengths has been demonstrated using a thermoelectrically-cooled semiconductor diode. The device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a tunable self-differencing circuit for enhanced detection sensitivity. The count rate is linear with the photon flux in the single photon detection regime over approximately four orders of magnitude, and saturates at 1 gigacount/s at high photon fluxes. This result highlights promising potential for APDs in high-bit-rate quantum information applications.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; APD; InGaAs; avalanche photodiodes; detection sensitivity; frequency 2 GHz; gigacount-second photon detection; high-bit-rate quantum information applications; photon flux; telecom wavelengths; thermoelectrically-cooled semiconductor diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3265
  • Filename
    6138377