DocumentCode
1430355
Title
Temperature dependence of gas-detection sensitivity of InGaAsSb/AlGaAsSb distributed feedback lasers at 2396 nm
Author
Ventrudo, B.F. ; Storey, C. ; Gupta, J.A. ; Bezinger, A.
Author_Institution
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
Volume
48
Issue
2
fYear
2012
Firstpage
114
Lastpage
116
Abstract
The HF gas detection sensitivity of GaSb-based distributed feedback lasers was studied in order to evaluate the potential use of operating temperature to control the laser output power in field applications. Measurements were made in the 2f wavelength modulation spectroscopy mode to monitor a prominent HF absorption feature at 2396 nm. An Allan variance analysis indicates that the best sensitivity is obtained when a larger thermoelectric current is applied to maintain temperature control by actively heating or cooling the laser. The reduced detection sensitivity for a setpoint near the ambient laser operating temperature is similar to that obtained without active temperature control.
Keywords
III-V semiconductors; aluminium compounds; cooling; distributed feedback lasers; gallium arsenide; gas sensors; heat treatment; hydrogen compounds; indium compounds; infrared spectra; measurement by laser beam; optical control; optical modulation; optical sensors; temperature control; thermoelectricity; Allan variance analysis; HF; InGaAsSb-AlGaAsSb; distributed feedback lasers; laser cooling; laser heating; laser output power; temperature control; temperature dependence gas-detection sensitivity; thermoelectric current; wavelength 2396 nm; wavelength modulation spectroscopy mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3369
Filename
6138379
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