Title :
The effect of trench-gate-oxide structure on EPROM device operation
Author :
Chu, Sam S D ; Steckl, Andrew J.
Author_Institution :
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
A floating-gate erasable programmable read-only memory (EPROM) cell with a thin trench-gate-oxide (TGO) structure near the drain region was fabricated using electron-beam lithography technology. Several promising advantages were found for the TGO cell. The writing time was measured to be 100 faster than conventional devices of the same dimensions. Two-dimensional (2-D) simulation of the TGO structure indicated that longitudinal and transverse channel electric fields are generated which simultaneously increase the hot-electron population in the channel and the injection efficiency into the floating gate. The devices exhibit high-transconductance, fast programming, good-tolerance to unintentional writing during readout, and potential for flash-erase application.<>
Keywords :
PROM; electron beam lithography; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; integrated memory circuits; semiconductor device models; 2D simulation; EPROM device operation; TGO; electron-beam lithography; erasable programmable read-only memory; fast programming; flash memory; flash-erase application; floating gate EPROM; good-tolerance; hot-electron population; injection efficiency; modelling; trench-gate-oxide structure; writing time; Doping; EPROM; Fabrication; Lithography; Nonvolatile memory; PROM; Systems engineering and theory; Time measurement; Two dimensional displays; Writing;
Journal_Title :
Electron Device Letters, IEEE
