Title :
High contrast GaInAs:Fe photoconductive optical AND gate for time-division demultiplexing
Author :
Desurvive, E. ; Tell, B. ; Kaminow, I.P. ; Qua, G.J. ; Brown-Goebeler, K.F. ; Miller, B.I. ; Koren, U.
Author_Institution :
AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ, USA
fDate :
3/31/1988 12:00:00 AM
Abstract :
A high-contrast, three port optical AND gate based on the photoconductive effect in Ga0.47In0.53As:Fe and operating in the λ=1.3-5 μm wavelength range is demonstrated. A 250:1 optical power contrast ratio (or 48 dB in electrical power after detection) is obtained in an optical-to-optical time division demultiplexing of a 100 MHz pulse train by a 6.25 MHz clock, both at λ=1.3 μm, with the demultiplexed output pulses at λ=1.5 μm
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; logic gates; optical communication equipment; photoconducting devices; time division multiplexing; 1.3 to 5 micron; 100 MHz; 100 MHz pulse train; 6.25 MHz; Ga0.47In0.53As:Fe; high-contrast; optical power contrast ratio; optical-to-optical time division demultiplexing; photoconductive effect; photoconductive optical AND gate; semiconductors; three port optical AND gate; time-division demultiplexing;
Journal_Title :
Electronics Letters
