DocumentCode :
1431242
Title :
Rigorous modeling of packaged Schottky diodes by the nonlinear lumped network (NL2N)-FDTD approach
Author :
Emili, Gianluca ; Alimenti, Federico ; Mezranotte, P. ; Roselli, Luca ; Sorrentino, Roberto
Author_Institution :
Dipt. di Ingenia Electron. e dell´´Inf., Perugia Univ., Italy
Volume :
48
Issue :
12
fYear :
2000
fDate :
12/1/2000 12:00:00 AM
Firstpage :
2277
Lastpage :
2282
Abstract :
Recently, a novel method has been proposed that allows general linear lumped networks to be incorporated within finite-difference time-domain (FDTD) simulators. In this paper, this method is extended in such a way as to represent two-terminal nonlinear lumped networks in a single FDTD grid cell. In particular, the extended method is applied to the rigorous modeling of packaged Schottky diodes. The implementation is first validated in the case of a diode connected to a voltage source. The SPICE simulator has been used to provide reference results. The same structure has also been used to establish the accuracy of the method, It has been demonstrated that such accuracy is significantly increased with respect to that of the conventional lumped-element-FDTD approach, Finally, the technique has been validated against measured results, showing a good agreement
Keywords :
Schottky diodes; equivalent circuits; finite difference time-domain analysis; lumped parameter networks; semiconductor device models; semiconductor device packaging; FDTD simulators; finite-difference time-domain simulators; modeling; nonlinear lumped network-FDTD approach; packaged Schottky diodes; single FDTD grid cell; two-terminal nonlinear lumped networks; Circuit simulation; Circuit topology; Finite difference methods; Millimeter wave circuits; Network topology; Packaging; Resistors; Schottky diodes; Time domain analysis; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.898975
Filename :
898975
Link To Document :
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