Scalable GaInP/GaAs HBT large-signal model

Author

Rudolph, Matthias ; Doerner, Ralf ; Beilenhoff, Klaus ; Heymann, Peter

Author_Institution

Microwave Dept., Ferdinand-Braun Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

48

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2370

Lastpage

2376

Abstract

A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented in this paper. It allows exact modeling of all transistor parameters from single-finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model includes a new collector description, which accounts for modulation of base-collector capacitance C_jc as well as for base and collector transit times due to temperature effects and high-current injection. The model is verified by comparison with measurements of GaInP/GaAs HBTs

Keywords

III-V semiconductors; UHF bipolar transistors; capacitance; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; GaInP-GaAs; GaInP/GaAs HBT model; HBT large-signal model; base transit times; base-collector capacitance modulation; collector description; collector transit times; heterojunction bipolar transistors; high-current injection; multifinger power devices; power applications; scalable HBT model; scaling rules; single-finger elementary cells; temperature effects; transistor parameters; Analytical models; Associate members; Capacitance; Electromagnetic heating; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave transistors; Power system modeling; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.898986

Filename

898986