DocumentCode
1431425
Title
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
Author
Ielmini, Daniele ; Nardi, Federico ; Cagli, Carlo ; Lacaita, Andrea L.
Author_Institution
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Volume
31
Issue
4
fYear
2010
fDate
4/1/2010 12:00:00 AM
Firstpage
353
Lastpage
355
Abstract
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.
Keywords
integrated circuit reliability; random-access storage; semiconductor storage; NiO-based resistive-switching memories; RRAM cells; conductive filament; high-density nonvolatile storage; size-dependent retention time; temperature-accelerated data retention; Nonvolatile memory; reliability estimation; reliability modeling; resistive-switching memory (RRAM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2040799
Filename
5424022
Link To Document