Title :
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
Author :
Ielmini, Daniele ; Nardi, Federico ; Cagli, Carlo ; Lacaita, Andrea L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
fDate :
4/1/2010 12:00:00 AM
Abstract :
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.
Keywords :
integrated circuit reliability; random-access storage; semiconductor storage; NiO-based resistive-switching memories; RRAM cells; conductive filament; high-density nonvolatile storage; size-dependent retention time; temperature-accelerated data retention; Nonvolatile memory; reliability estimation; reliability modeling; resistive-switching memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2040799
