Title :
A high-efficiency and low-phase-noise 38-GHz pHEMT MMIC tripler
Author :
Boudiaf, Ali ; Bachelet, Didier ; Rumelhard, Christian
Author_Institution :
ATN-Microwave, North Billerica, MA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Frequency translation circuits are key elements in communication systems. This paper presents a frequency tripler for 38-GHz short-range communication systems, designed using a pseudomorphic high electron-mobility field-effect transistor (pHEMT) technology. The successful first iteration monolithic microwave integrated circuit achieved a state-of-the-art output power of 3.1 dBm and a minimum conversion loss of 3.4 dB. The multiplier exhibits a conversion efficiency of 11% and average phase noise degradation at 10 and 100 kHz offset frequency from carrier of 9±1 dB. Through a comprehensive study of the frequency multiplier, we demonstrate the optimum performance achieved under a class B mode of operation. To our knowledge, this is the first reported Ka-band single-stage frequency tripler based on pHEMT technology that has been fully characterized for phase noise degradation
Keywords :
HEMT integrated circuits; MMIC frequency convertors; field effect MIMIC; frequency multipliers; integrated circuit noise; losses; millimetre wave frequency convertors; phase noise; 11 percent; 3.4 dB; 38 GHz; Ka-band; average phase noise degradation; class B mode; conversion efficiency; conversion loss; frequency multiplier; frequency translation circuits; monolithic microwave integrated circuit; output power; pHEMT MMIC tripler; pseudomorphic high electron-mobility field-effect transistor; short-range communication systems; Degradation; Field effect MMICs; Frequency; Integrated circuit technology; Microwave FET integrated circuits; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Phase noise; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
