Title :
An L-band high-efficiency and low-distortion power amplifier using HPF/LPF combined interstage matching circuit
Author :
Mori, Kazutomi ; Shinjo, Shintaro ; Kitabayashi, Fumimasa ; Ohta, Akira ; Ikeda, Yukio ; Ishida, Osami
Author_Institution :
Inf. Technol. Res. & Dev. Center, Mitsubishi Electr. Corp., Kanagawa, Japan
fDate :
12/1/2000 12:00:00 AM
Abstract :
An L-band high-efficiency and low-distortion power amplifier using a high-pass filter/low-pass filter (HPF/LPF) combined interstage matching circuit is presented in this paper. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the driver-stage FET and the optimum source impedance of the final-stage FET to achieve high efficiency with a specified distortion. The circuit has been utilized in a three-stage high-power-amplifier module, the size of which is 0.08 cm3 (7 mm×7 mm×1.7 mm). The amplifier achieves a power-added efficiency of 43.9% and an output power (Pout) of 27.1 dBm with an adjacent channel leakage power of -38 dBc at 1.95 GHz for wide-band code-division multiple-access cellular phones
Keywords :
HEMT integrated circuits; MMIC power amplifiers; UHF integrated circuits; cellular radio; code division multiple access; electric distortion; field effect MMIC; high-pass filters; impedance matching; low-pass filters; telephone sets; 1.95 GHz; 43.9 percent; HPF/LPF combined interstage matching circuit; L-band; adjacent channel leakage power; driver-stage FET; high-pass filter/low-pass filter; low-distortion power amplifier; optimum load impedance; optimum source impedance; output power; power-added efficiency; three-stage high-power-amplifier module; wide-band code-division multiple-access cellular phones; Broadband amplifiers; Circuits; FETs; High power amplifiers; Impedance; L-band; Low pass filters; Matched filters; Power amplifiers; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
