DocumentCode :
1431528
Title :
Ultrafast Low-Loss 42–70 GHz Differential SPDT Switch in 0.35 
m SiGe Technology
Author :
Thian, Mury ; Fusco, Vincent F.
Author_Institution :
ECIT Inst., Queen´´s Univ. Belfast, Belfast, UK
Volume :
60
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
655
Lastpage :
659
Abstract :
This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.
Keywords :
Ge-Si alloys; millimetre wave devices; semiconductor switches; SiGe; bipolar technology; bit rate 13 Gbit/s; current-steering technique; frequency 42 GHz to 70 GHz; size 0.35 mum; time 75 ps; ultrafast low-loss differential SPDT switch; ultrafast wideband low-loss single-pole double-throw differential switch; Impedance matching; Insertion loss; Silicon germanium; Switches; Switching circuits; Transistors; Transmission line measurements; 60 GHz; Absorptive; V-band; balanced circuits; current steering; heterojunction bipolar transistor (HBT); insertion loss; integrated circuit (IC); isolation; mm-wave; rise time; silicon germanium (SiGe); single-pole double-throw (SPDT); switches; switching speed; transistor circuits;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2180395
Filename :
6138887
Link To Document :
