Suppression of leakage resonance in coplanar MMIC packages using a Si sub-mount layer

Author

Kim, Sung-Jin ; Ho-Sung Yeon ; Lee, Hai-Young

Author_Institution

Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea

Volume

48

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2664

Lastpage

2669

Abstract

In this paper, we examined the parasitic leakage resonance of coplanar monolithic microwave and millimeter-wave integrated circuits (MMICs) by the finite-difference time-domain calculations and experiments. The results show that leakages from coplanar MMICs become significantly resonant in finite substrates and packaging enclosures. In order to avoid the leakage resonance, a resonance suppression method using a doped-Si sub-mount layer is proposed and experimented in a frequency range from 0.5 to 40 GHz. The resonance suppression scheme is verified by measuring the S-parameters of the fabricated conductor-backed coplanar waveguides having an Si sub-mount layer of different resistivities (1 mΩ·cm, 15 Ω·cm, and 4 kΩ·cm). The leakage resonance can be completely suppressed using the typical 15 Ω·cm Si sub-mount layer

Keywords

MMIC; S-parameters; coplanar waveguides; finite difference time-domain analysis; integrated circuit packaging; leakage currents; resonance; silicon; substrates; 0.5 to 40 GHz; 1 mohmcm; 15 ohmcm; 4 kohmcm; FDTD calculations; S-parameters; Si sub-mount layer; conductor-backed CPW; conductor-backed coplanar waveguides; coplanar MMIC packages; doped-Si layer; finite substrates; finite-difference time-domain calculations; leakage resonance suppression; packaging enclosures; parasitic leakage resonance; Conductivity; Coplanar waveguides; Finite difference methods; Frequency; Integrated circuit packaging; MMICs; Millimeter wave integrated circuits; Resonance; Scattering parameters; Time domain analysis;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.899028

Filename

899028