• DocumentCode
    1431619
  • Title

    Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

  • Author

    Knoch, Joachim ; Appenzeller, Joerg

  • Author_Institution
    Tech. Univ. Dortmund, Dortmund, Germany
  • Volume
    31
  • Issue
    4
  • fYear
    2010
  • fDate
    4/1/2010 12:00:00 AM
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    The impact of band lineup and source doping concentration on the performance of heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by simulations. Exemplarily, H-TFETs based on InAs/AlxGa1-xSb heterostructures are studied. Varying the Al content x, the band lineup can be adjusted from staggered to broken. We find that a staggered band lineup and a medium source doping concentration yield the best ON/OFF-state performance in terms of an inverse subthreshold slope that is smaller than 60 mV/dec and fT values in the terahertz range.
  • Keywords
    III-V semiconductors; aluminium compounds; doping; field effect transistors; gallium compounds; indium compounds; tunnel transistors; InAs-AlxGa1-xSb; band lineup; high-performance p-type III-V heterojunction tunnel FETs; source doping concentration; Heterojunctions; MOS devices; tunnel transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2041180
  • Filename
    5424051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1431619