Title :
Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film
Author :
Ha, Heonjun ; Kim, Ohyun
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fDate :
4/1/2010 12:00:00 AM
Abstract :
The effect of various electrode materials has been studied for organic nonvolatile memory devices using a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film. The bottom electrodes (BEs) were indium tin oxide (ITO) and Al, while the top electrodes (TEs) were Al, Ti, Cr, ITO, Au, Ni, Pd, and Pt. The ITO/PEDOT:PSS/TE devices only had a bipolar switching behavior, while the Al/PEDOT:PSS/TE devices did not have any switching behavior unless a compliance current (CC) was used in the write-operation method. Then, they had a unipolar switching behavior irregardless of the TE material. Therefore, the BE material and the CC have crucial roles in the switching behavior and characteristics.
Keywords :
aluminium; chromium; electrodes; gold; indium compounds; nickel; organic semiconductors; palladium; platinum; random-access storage; switching circuits; thin film devices; titanium; Al; Au; Cr; ITO; Ni; Pd; Pt; Ti; bipolar switching behavior; bottom electrodes; compliance current; electrode-material-dependent switching characteristics; organic nonvolatile memory devices; poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) thin film; top electrodes; write-operation method; Compliance current (CC); nonvolatile memory devices; poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film; various electrode materials;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041182
