Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

Author

Knoll, L. ; Zhao, Q.T. ; Habicht, S. ; Urban, C. ; Ghyselen, B. ; Mantl, S.

Author_Institution

Inst. of Bioand Nanosystems (IBN1-IT), Forschungszentrum Julich, Julich, Germany

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

350

Lastpage

352

Abstract

Ultrathin Ni silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The Ni layer thickness crucially determines the silicide phase formation: With a 3-nm Ni layer, high-quality epitaxial NiSi₂ layers were grown at temperatures > 450??C, while NiSi was formed with a 5-nm-thick Ni layer. A very thin Pt interlayer, to incorporate Pt into NiSi, improves the thermal stability and the interface roughness and lowers the contact resistivity. The contact resistivity of epitaxial NiSi₂ is about one order of magnitude lower than that of a NiSi layer on both As- and B-doped SOI and SSOI.

Keywords

contact resistance; nickel; semiconductor epitaxial layers; silicon-on-insulator; thermal stability; Ni; NiSi₂; SSOI substrates; biaxially tensile strained SOI; contact resistivity; interface roughness; low contact resistance; silicide phase formation; silicon-on-insulator; size 3 nm; size 5 nm; strained silicon; thermal stability; ultrathin silicides; unstrained silicon; Contact resistance; Ni silicide; epitaxial $ hbox{NiSi}_{2}$; strained silicon-on-insulator (SSOI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2041028

Filename

5424064