DocumentCode :
1431720
Title :
Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime
Author :
Kang, Kai ; Tan, Cher Jiun ; Brinkhoff, James ; Shi, Jinglin ; Lin, Fujiang
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Volume :
31
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
362
Lastpage :
364
Abstract :
Coupling effects between on-chip spiral inductors operating in the millimeter-wave (mm-wave) regime have been investigated. The trend of the coupling factor as a function of inductor spacing and number of turns is found, and the implications of this for radio-frequency (RF) and mm-wave circuit layout are discussed. A series of coupled circular spiral inductors with different number of turns and distance was fabricated in a 0.18-??m CMOS process and measured up to 65 GHz. A new SPICE-compatible scalable equivalent circuit model for coupled inductors on silicon is also developed and verified by measurements. The model can help RF and mm-wave circuit designers to characterize the coupling effects of neighboring inductors, optimize layout to save expensive chip area, and achieve first-pass silicon success.
Keywords :
CMOS integrated circuits; coupled circuits; field effect MIMIC; inductors; integrated circuit layout; CMOS process; SPICE-compatible scalable equivalent circuit model; coupling effects; coupling factor; first-pass silicon success; inductor spacing; mm-wave circuit layout; on-chip spiral inductors; radio-frequency circuit layout; size 0.18 mum; $pi$-model; CMOS; coupled inductors; coupling effects; millimeter-wave (mm-wave) integrated circuit (IC); mutual inductance; radio-frequency integrated circuit (RFIC); scalable model;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2041426
Filename :
5424066
Link To Document :
بازگشت