• DocumentCode
    143174
  • Title

    High-sensitivity split-contact magnetoresistors on lightly doped silicon substrates

  • Author

    Santillan-Quinonez, Gerard F. ; Galup-Montoro, Carlos

  • Author_Institution
    Dept. of R&D, Smart Electron. Peru, Peru
  • fYear
    2014
  • fDate
    25-28 Feb. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper we show that silicon split-contact magnetoresistors with geometric dimensions of the order of the Debye length (LD) can have much higher sensitivities than the usual devices with much larger length and width than LD. Numerical simulations carried out with Comsol Multiphysics show that silicon n-type magnetoresistors with dimensions of the order of LD can have magnetic sensitivity as high as 60%/T which is ten times higher than usual sensitivities.
  • Keywords
    elemental semiconductors; magnetoresistive devices; resistors; semiconductor device models; silicon; Comsol Multiphysics; Debye length; Si; geometric dimensions; high-sensitivity split-contact magnetoresistors; lightly doped silicon substrates; magnetic sensitivity; n-type magnetoresistors; Current density; Equations; Magnetoresistive devices; Mathematical model; Numerical simulation; Sensitivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
  • Conference_Location
    Santiago
  • Print_ISBN
    978-1-4799-2506-3
  • Type

    conf

  • DOI
    10.1109/LASCAS.2014.6820254
  • Filename
    6820254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=143174