• DocumentCode
    1431785
  • Title

    Gold-Free GaAs Nanowire Synthesis and Optical Properties

  • Author

    Morral, A. Fontcuberta i

  • Author_Institution
    Inst. of Mater., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
  • Volume
    17
  • Issue
    4
  • fYear
    2011
  • Firstpage
    819
  • Lastpage
    828
  • Abstract
    To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without the use of gold as a catalyst is reviewed. The review focuses on gallium-assisted growth and selective area epitaxy, revealing the common and different growth mechanisms and resulting properties. In particular, we show how the excellent material quality results also in excellent optical properties of gold-free GaAs nanowires and related heterostructures. Finally, the perspectives for future applications are discussed.
  • Keywords
    III-V semiconductors; catalysts; gallium arsenide; molecular beam epitaxial growth; nanowires; GaAs; catalyst; gallium-assisted growth; gold-free nanowire synthesis; material quality; negative effects; optical properties; selective area epitaxy; Epitaxial growth; Gallium arsenide; Gold; Substrates; Temperature measurement; Catalyst free; gold free; growth mechanisms; molecular beam epitaxy (MBE); nanowires;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2010.2091259
  • Filename
    5696729