InGaAs vertical-cavity surface-emitting lasers

Author

Geels, Randall S. ; Corzine, Scott W. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1359

Lastpage

1367

Abstract

The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs VCSELs. A simple method to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors is introduced. The theoretical predictions are compared to results from actual device measurements. A novel technique is introduced to determine material parameters: fabrication of in-plane lasers from VCSEL material. The procedure used to determine the optical mode in such an in-plane laser is described. Using the insight gained from modeling, the external efficiency was increased to >30% with a threshold current density of 1 kA/cm²

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; III-V semiconductors; InGaAs veritcal cavity surface emitting lasers; compound metal/semiconductor stack mirrors; design; external efficiency; fabrication; graded interfaces; in-plane lasers; modeling; optical mode; reflectivity; semiconductor stack mirrors; theoretical predictions; threshold current density; Indium gallium arsenide; Laser modes; Laser theory; Mirrors; Optical materials; Reflectivity; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89952

Filename

89952