GaAs buried heterostructure vertical cavity top-surface emitting lasers

Author

Ibaraki, Akira ; Furusawa, Kotaro ; Ishikawa, Toru ; Yodoshi, Keiichi ; Yamaguchi, Takao ; Niina, Tatsuhiko

Author_Institution

Sanyo Electric Co., Osaka, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1386

Lastpage

1390

Abstract

Room-temperature continuous wave (CW) operation was achieved using GaAs buried heterostructure vertical cavity top-surface emitting lasers with both GaAlAs/AlAs and SiO₂/TiO₂ distributed Bragg reflectors (DBRs). One-step organometallic vapor phase epitaxy (OMVPE) and two-step liquid phase epitaxy (LPE) growth techniques has been developed. In order to improve the reflectivity of both DBRs, the Bragg wavelength was designed to correspond with a longer mode than the lasing mode under pulsed conditions, and a sufficiently flat planar surface was formed by LPE growth. The threshold current was 17.4 mA, and an output power of up to 0.84 mW was obtained. The lasing wavelength was about 911 nm. A 5×6 common voltage array was used as a trial structure for a two-dimensional array consisting of the buried heterostructure top-surface emitting laser diodes

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; liquid phase epitaxial growth; semiconductor junction lasers; semiconductor laser arrays; vapour phase epitaxial growth; 0.84 mW; 17.4 mA; 911 nm; Bragg wavelength; GaAs buried heterostructure vertical cavity top surface emitting lasers; GaAsAs-AlAs; III-V semiconductor; SiO₂-TiO₂; buried heterostructure top-surface emitting laser diodes; common voltage array; distributed Bragg reflectors; flat planar surface; growth techniques; lasing mode; lasing wavelength; organometallic vapor phase epitaxy; output power; pulsed conditions; reflectivity; room temperature continuous wave operation; threshold current; two-dimensional array; two-step liquid phase epitaxy; Distributed Bragg reflectors; Epitaxial growth; Gallium arsenide; Optical arrays; Reflectivity; Semiconductor laser arrays; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89955

Filename

89955