Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells

Author

Chen, Ying-Chih ; Wang, P. ; Coleman, James J. ; Bour, David P. ; Lee, K.K. ; Waters, R.G.

Author_Institution

Dept. of Phys. & Astron., Hunter Coll., City Univ. of New York, NY, USA

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1451

Lastpage

1455

Abstract

The carrier recombination rates in semiconductor quantum wells are found to be structure dependent. Under high levels of excitation they generally do not follow the recombination rule of the bulk material. Through a differential carrier-lifetime measurement in the strained-layer InGaAs/GaAs quantum wells, it is shown that in quantum wells with lower potential barrier or thinner well width, the recombination rates are smaller due to a larger portion of the injected carriers populating the confinement layers where the carriers recombine more slowly owing to dilute carrier volume density

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; semiconductor quantum wells; III-V semiconductors; carrier recombination rates; confinement layers; differential carrier-lifetime measurement; dilute carrier volume density; injected carriers; potential barrier; semiconductor quantum wells; strained layer InGaAs-GaAs quantum wells; well width; Carrier confinement; Charge carrier density; Charge carrier lifetime; Composite materials; Laboratories; Lifetime estimation; Material storage; Radiative recombination; Semiconductor materials; Spontaneous emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89962

Filename

89962