A fully symbolic homotopy-based memristor model for applications to circuit simulation

Author

Sarmiento-Reyes, Arturo ; Hernandez-Martinez, Luis ; Hernandez Mejia, Carlos ; Diaz Arango, Gerardo Ulises ; Vazquez-Leal, Hector

Author_Institution

Electron. Dept., INAOE, Puebla, Mexico

fYear

2014

fDate

25-28 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

Since the outcoming of the memristor, memristive systems and mem-elements in electronics, new features for analog and digital circuit design have been introduced, and as a result models for the memristor are strongly needed in order to incorporate the device to the design flow loop. In this paper, a model for the memristor is introduced, it is generated by solving the differential equation, that governs the physical functioning of the device, by using a homotopy formulation. The generated model is recast in fully symbolic form that can be used to carry out behavioral simulation of circuits containing memristors.

Keywords

circuit simulation; differential equations; memristors; perturbation techniques; analog circuit design; circuit simulation; design flow loop; differential equation; digital circuit design; fully symbolic homotopy-based memristor model; homotopy formulation; mem-elements; memristive systems; Computational modeling; Differential equations; Equations; Integrated circuit modeling; Mathematical model; Memristors; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on

Conference_Location

Santiago

Print_ISBN

978-1-4799-2506-3

Type

conf

DOI

10.1109/LASCAS.2014.6820269

Filename

6820269