A comprehensive design method for dual-gate MOSFET mixers

Author

Bergsma, A.J. ; Syrett, B.A.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

Volume

47

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

1443

Lastpage

1451

Abstract

A comprehensive design method for a dual-gate MOSFET (DGFET) mixer is proposed which provides a practical procedure to predict both the conversion gain and input compression point and to identify optimal bias conditions and local oscillator (LO) power level. Each step in the process can be implemented by either simulation or experimental methods and is suitable for both up-conversion or down-conversion. The technique is aimed at producing a well engineered design, not a rigorous numerical solution. Using a discrete packaged device, a single-balanced DGFET down-converter mixer circuit is designed and characterized using an RF input frequency of 857 MHz, LO frequency of 694 MHz, and an IF output frequency of 163 MHz

Keywords

MOS analogue integrated circuits; MOSFET circuits; UHF integrated circuits; UHF mixers; integrated circuit design; nonlinear network synthesis; 163 MHz; 694 MHz; 857 MHz; FET down-converter mixer circuit; LO power level; RFIC; conversion gain; design method; down-conversion; dual-gate MOSFET mixers; input compression point; local oscillator power level; optimal bias conditions; single-balanced mixer circuit; up-conversion; Circuit topology; Design engineering; Design methodology; FETs; Local oscillators; MOSFET circuits; Power MOSFET; Radio frequency; Radiofrequency integrated circuits; Transfer functions;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.899638

Filename

899638