DocumentCode :
143205
Title :
0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS
Author :
Mattia, Oscar E. ; Klimach, Hamilton ; Bampi, Sergio
Author_Institution :
Microelectron. Grad. Program, Fed. Univ. of Rio Grande do Sul, Porto Alegre, Brazil
fYear :
2014
fDate :
25-28 Feb. 2014
Firstpage :
1
Lastpage :
4
Abstract :
In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.
Keywords :
CMOS integrated circuits; network topology; power consumption; CMOS; nano-ampere current consumption range; power 4.86 nW; power 5 nW; power consumption; resistorless sub-bandgap voltage reference; size 0.18 mum; small area topology; voltage 0.9 V; voltage 479 mV; Junctions; MOSFET; Photonic band gap; Threshold voltage; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
Conference_Location :
Santiago
Print_ISBN :
978-1-4799-2506-3
Type :
conf
DOI :
10.1109/LASCAS.2014.6820273
Filename :
6820273
Link To Document :
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