Title :
TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice
Author :
Okamoto, Minoru ; Sato, Kenji ; Mawatari, Hiroyasu ; Kano, Fumiyoshi ; Magari, Katsuaki ; Kondo, Yasuhiro ; Itaya, Yoshio
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga0.27In0.53As-Gax In1-xAs tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; Ga0.27In0.53As-GaxIn1-x As tensile strained layer superlattice structures; GaInAs-InP lasers; III-V semiconductors; TM mode gain enhancement; active layer; band diagram; gain difference; long wavelength laser diodes; tensile strained barrier structure; tensile strained-layer superlattice; transverse electric modes; transverse magnetic mode gain; well layer thicknesses; Laser modes; Laser sintering; Lattices; Optical devices; Radiative recombination; Semiconductor lasers; Superlattices; Tellurium; Tensile strain; Tensile stress;
Journal_Title :
Quantum Electronics, IEEE Journal of
