Design Considerations for a Fast Stacked-MOSFET Switch

Author

Sack, M. ; Keipert, Sebastian ; Hochberg, Michael ; Greule, Mario ; Mueller, G.

Author_Institution

Inst. for Pulsed Power & Microwave Technol., Karlsruhe Inst. of Technol., Eggenstein-Leopoldshafen, Germany

Volume

41

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

2630

Lastpage

2636

Abstract

For fast pulse generators using pulse-forming lines for energy storage, a fast MOSFET is employed as switch. It needs to have the capability of switching on the current within a short rise time. Fast switching of MOSFET requires the gate driver next to MOSFET in order to minimize the inductance. To increase the voltage switching capability of a MOSFET switch, several MOSFETs are switched in series. For such a configuration, a synchronous switching of MOSFETs is crucial. Hence, the gate drive circuitry needs to be designed to have equal propagation delay for each MOSFET. The circuitry for two stages of a stacked MOSFET switch including power supply and trigger circuit is designed, set up, and tested. The paper describes some design considerations and shows the results of some first tests.

Keywords

MOSFET; driver circuits; field effect transistor switches; integrated circuit design; power supply circuits; pulse generators; trigger circuits; design considerations; energy storage; fast stacked-MOSFET switch; gate drive circuitry; gate driver; power supply; propagation delay; pulse generators; pulse-forming lines; stacked MOSFET switch; synchronous switching; trigger circuit; voltage switching capability; Delays; Inductance; Logic gates; MOSFET; Switches; Switching circuits; Windings; MOSFET switch; pulse generator;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2013.2267395

Filename

6548092