Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes

Author

De Souza, Christina F. ; Alizadeh, Azar ; Nair, Selvakumar ; Saveliev, Igor ; Blumin, Marina ; Ruda, Harry E. ; Hays, David C. ; Watkins, Vicki H. ; Conway, Ken R. ; Braunstein, Edit

Author_Institution

Dept. of Mater. Sci., Univ. of Toronto, Toronto, ON, Canada

Volume

46

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

832

Lastpage

836

Abstract

We report on measurements of the infrared photo-response of InAs-based p-i-n diodes in the spectral region above 1.8 Â¿m. These photodiodes were fabricated from arrays of InAs quantum dots grown in nano-patterned template structures using a combination of block copolymer lithography and molecular beam epitaxy. The devices studied were comprised of a single layer of quantum dots. The temperature dependence of the current versus voltage for these devices is presented and discussed. Finally, a model is presented that can explain the key characteristics of the measured current versus voltage curves as a function of both temperature and applied electric field.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; lithography; molecular beam epitaxial growth; nanopatterning; p-i-n photodiodes; semiconductor quantum dots; InAs-GaAs; block copolymer lithography; infrared photoresponse; key characteristics; molecular beam epitaxy; nanopatterned; quantum dot p-i-n photodiodes; quantum dots; single layer; temperature dependence; Gallium arsenide; Infrared spectra; Lithography; Molecular beam epitaxial growth; Nanopatterning; Nanostructures; P-i-n diodes; PIN photodiodes; Quantum dots; Voltage; Block copolymer lithography; patterned growth of quantum dots; quantum dot mid-wave infrared detectors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2009.2035360

Filename

5424139