AlGaInP visible laser diodes grown on misoriented substrates

(Al_xGa_1-x)_0.5In_0.5P epitaxial layers and the basic characteristics of AlGaInP laser diodes grown on misoriented substrates by metalorganic chemical-vapor deposition (MOCVD) are described. Using (100) GaAs substrates with a misorientation of 5-7° toward the [011] direction, the bandgap energy of the epitaxial layers was about 50-60 meV wider than that for (100) substrates. A p-carrier concentration that was twice that of (100) substrates was obtained. The transverse-mode stabilized laser diodes oscillating at 655-7 nm were obtained without adding Al to the active layer. The maximum continuous-wave (CW) light output power was 25 mW. The maximum CW operation temperature and characteristic temperature were 85°C and ~100 K, respectively. The laser diodes have been operating reliably for more than 3000 h under 3 mW at 50°C. By adding an Al composition of X=0.15 to the active laser and using a 7° misoriented substrate a room-temperature CW operation wavelength of 631 nm was obtained