Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing

Latent damage in thin oxides, caused by high-field impulse stressing, can lead to increased trap generation in the device during the subsequent hot-carrier stressing. Monitoring of such damage is typically carried out by detecting the change in an appropriate electrical parameter of the device or by extracting the generated interface states and trapped charges. It was found that low-frequency noise measurements could provide a more sensitive alternative for characterizing the electrostatic discharge stress-induced latent damage in thin oxides.