• DocumentCode
    1432346
  • Title

    Dependence of the linewidth of a semiconductor laser on the mode distribution

  • Author

    Krüger, Udo ; Petermann, Klaus

  • Author_Institution
    Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
  • Volume
    26
  • Issue
    12
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    2058
  • Lastpage
    2064
  • Abstract
    A theory and measurements that show the dependence of the frequency noise spectrum and, therefore, of the semiconductor laser linewidth on the mode distribution are presented. The theory is based on rate equations where the linewidth is strongly influenced by the gain saturation coefficients (nonlinear gain). Analytical results are restricted to two modes. Measurements show that the linewidth change of the main mode depends on the wavelength side of the side mode (related to the wavelength mode of the main mode) and the effect decreases with increasing mode separation. Furthermore, the theoretical and measured frequency noise spectra of a three-mode laser are depicted, showing a characteristic resonance peak for certain mode distributions. This property of the frequency noise spectrum is also described by the theory
  • Keywords
    electron device noise; laser modes; optical saturation; semiconductor junction lasers; spectral line breadth; characteristic resonance peak; frequency noise spectrum; gain saturation coefficients; mode distribution; mode separation; nonlinear gain; rate equations; semiconductor laser linewidth; side mode; three-mode laser; Frequency measurement; Laser modes; Laser noise; Laser theory; Noise measurement; Nonlinear equations; Resonance; Semiconductor device noise; Semiconductor lasers; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.64340
  • Filename
    64340