DocumentCode :
1432390
Title :
New window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering
Author :
Itaya, Kazuhiko ; Ishikawa, Masayuki ; Hatakoshi, Gen-ichi ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Volume :
27
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
1496
Lastpage :
1500
Abstract :
The behavior of Zn diffusion in InGaAlP double heterostructures during a second metalorganic chemical vapor deposition (MOCVD) growth was investigated, and it found that the behavior of Zn diffusion strongly depends on the presence of an n-GaAs capping layer. A process for InGaAlP window-structure InGaAlP laser diodes was designed using this unique diffusion behavior and disordering of a natural superlattice. A window structure realizing a high power operation was successfully fabricated. A maximum output power above 80 mW was obtained for continuous wave (CW) operation, and 400 mW for pulsed operation
Keywords :
III-V semiconductors; aluminium compounds; diffusion in solids; gallium compounds; indium compounds; semiconductor junction lasers; 400 mW; 80 mW; CW operation; III-V semiconductor; InGaAlP double heterostructures; InGaAlP:Zn; MOCVD; high power operation; metalorganic chemical vapor deposition; n-GaAs capping layer; natural superlattice disordering; output power; pulsed operation; self-selective Zn diffusion-induced disordering; window-structure InGaAlP visible light laser diodes; Atomic layer deposition; Chemical lasers; Diode lasers; Electrons; MOCVD; Optical superlattices; Photonic band gap; Power generation; Power lasers; Zinc;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.89969
Filename :
89969
Link To Document :
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