Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT´s

Author

Canali, Claudio ; Pavan, Paolo ; Carlo, Aldo Di ; Lugli, Paolo ; Malik, Roger ; Manfredi, Manfredo ; Neviani, Andrea ; Vendrame, Loris ; Zanoni, Enrico ; Zandler, Günther

Author_Institution

Dipartimento di Sci., Modena Univ., Italy

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1769

Lastpage

1777

Abstract

We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT´s) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; hot carriers; impact ionisation; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductors; Monte Carlo analysis; base-collector junction; current densities; dead-space effects; hot electron effects; impact-ionization; light emission; multiplication factor; weighted Monte Carlo procedure; Associate members; Bipolar transistors; Current density; Doping profiles; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Irrigation; Monte Carlo methods; Space charge;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.542420

Filename

542420