Title :
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT´s
Author :
Canali, Claudio ; Pavan, Paolo ; Carlo, Aldo Di ; Lugli, Paolo ; Malik, Roger ; Manfredi, Manfredo ; Neviani, Andrea ; Vendrame, Loris ; Zanoni, Enrico ; Zandler, Günther
Author_Institution :
Dipartimento di Sci., Modena Univ., Italy
fDate :
11/1/1996 12:00:00 AM
Abstract :
We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT´s) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; hot carriers; impact ionisation; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductors; Monte Carlo analysis; base-collector junction; current densities; dead-space effects; hot electron effects; impact-ionization; light emission; multiplication factor; weighted Monte Carlo procedure; Associate members; Bipolar transistors; Current density; Doping profiles; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Irrigation; Monte Carlo methods; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
