High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers

The authors present results obtained with a newly developed technology of growth of ⟨100⟩-oriented InGaAsP-GaAs structures, with their active region composition corresponding to lasing at λ=0.8 μm. The structures used are described, and the output loss dependence of the threshold current densities and differential efficiency for broad-area contact diodes based on these structures are discussed. The light-current characteristics show that such diodes with a 100-μm-wide stripe can produce continuous wave (CW) optical power in excess of 5 W. As shown by measurements of the local temperature rise near the active region, the rate of temperature increase above the lasing threshold is determined by the diode efficiency. No failures which could be attributed to a catastrophic growth of dark line defects have been observed to occur in these diodes. Lifetime tests on the laser diodes and studies of defect formation in the active region of the laser structures under optical pumping are discussed