Title :
Quantum Efficiency Determination of a Novel CMOS Design for Fast Imaging Applications in the Extreme Ultraviolet
Author :
Herbert, Stefan ; Banyay, Matus ; Maryasov, Aleksey P. ; Hochschulz, Frank ; Paschen, Uwe ; Vogt, Holger ; Juschkin, Larissa
Author_Institution :
Dept. of Technol. of Opt. Syst., RWTH Aachen Univ., Aachen, Germany
fDate :
3/1/2012 12:00:00 AM
Abstract :
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.
Keywords :
CMOS integrated circuits; etching; integrated circuit design; integrated circuit measurement; integrated optoelectronics; optical images; photodiodes; CMOS design; deep optical stack etching extreme; extreme ultraviolet imaging; quantum efficiency; quantum efficiency determination; quantum yield measurements; ultraviolet complementary metal-oxide-semiconductor photodiodes; CMOS integrated circuits; Educational institutions; Optical imaging; Optical sensors; Photodiodes; Photonics; Ultraviolet sources; Defect inspection; EUV microscopy; extreme ultraviolet (EUV) complementary metal–oxide–semiconductor (CMOS);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2177838
