High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping

Author

Shigihara, Kimio ; Nagai, Yutaka ; Karakida, Shoichi ; Takami, Akihiro ; Kokubo, Yoshihiro ; Matsubara, Hiroshi ; Kakimoto, Syoichi

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1537

Lastpage

1543

Abstract

The dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LDs) are analyzed. Conditions for the facet reflectivity to achieve optimum values are identified. Under these conditions, the authors obtained respective maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LDs for 150 μm stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. These LDs were stably operated for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45°C in CW operation

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; neodymium; optical pumping; reflectivity; semiconductor junction lasers; solid lasers; 1 W; 150 micron; 2.6 W; 2.9 W; 2000 h; 45 degC; 808 nm; AlGaAs single quantum wells; CW condition; GaAs; III-V semiconductor; Nd:YAG laser pumping; SQW SCH LD; YAG:Nd; YAl5O12:Nd; automatic power control circuits; broad-area laser diodes; facet reflectivity; high power operation; lasing characteristics; single-stripe LDs; DH-HEMTs; Diode lasers; Gallium arsenide; Laser excitation; Neodymium; Power generation; Pump lasers; Reflectivity; Solid lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89974

Filename

89974