Title :
High-power 780 nm AlGaAs quantum-well lasers and their reliable operation
Author :
Yamashita, Shigeo ; Nakatsuka, Shin-ichi ; Uchida, Kenji ; Kawano, Toshihiro ; Kajimura, Takashi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A high-power laser in the 780-nm wavelength region was realized by introducing an AlGaAs ternary alloy quantum-well structure. Since there is no axial structure, high reproducibility is expected. By applying the quantum-well structure to the AlGaAs ternary alloy wells, a reduction in the operation current of a laser which oscillates in the 780-nm wavelength region can be achieved. A reduction of the optical power density in the direction perpendicular to the junction plane is examined to lessen facet degradation. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50°C and 60 mW conditions was achieved. A relatively high characteristic temperature of around 150 K was also obtained. The results of an aging test are provided
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; life testing; reliability; semiconductor junction lasers; 1000 h; 150 K; 50 degC; 60 mW; 780 nm; AlGaAs; AlGaAs quantum-well lasers; AlGaAs ternary alloy; III-V semiconductor; aging test; catastrophic optical damage; characteristic temperature; facet degradation; high reproducibility; high-power laser; optical power density; reliable operation; stable operation; triple quantum-well; Chemical lasers; Disk recording; Light sources; Optical recording; Power generation; Power lasers; Quantum well lasers; Quantum wells; Temperature; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of