1.53 μm InGaAsP-InP first-order λ/4-shifted distributed feedback lasers with high coupling coefficients

Author

Hillmer, Hartmut ; Hansmann, Stefan ; Burkhard, Herbert

Author_Institution

DBP TELEKOM, Forschungsinst. beim FTZ, Darmstadt, Germany

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1753

Lastpage

1758

Abstract

The authors report on the performance of distributed feedback lasers, revealing coupling coefficients as high as 330 cm^-1. No mode hopping is observed, stable single-mode operation at a high sidemode suppression ratio up to 51.2 dB is obtained, and the linewidths are linear with increasing reciprocal output power. Well-open eyes and no bit-pattern effects are observed in 5 and 8 GB/s nonreturn to zero modulations. In addition, high coupling is found to have several important advantages, e.g. lower feedback sensitivity, lower threshold gain for the Bragg mode, lower relative intensity noise, and lower influence on the facet reflectivity and n the end-facet phase, resulting in a higher yield of single-mode lasers for arbitrary cleaved facets

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.53 micron; Bragg mode; III-V semiconductors; InGaAsP-InP; arbitrary cleaved facets; coupling coefficients; distributed feedback lasers; end-facet phase; facet reflectivity; feedback sensitivity; linewidths; modulations; reciprocal output power; relative intensity noise; sidemode suppression ratio; single-mode lasers; stable single-mode operation; threshold gain; Diode lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gratings; Laser feedback; Laser modes; Laser theory; Milling; Optical coupling;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89981

Filename

89981