Title :
Fabrication and characteristics of GaAs-AlGaAs tunable laser diodes with DBR and phase-control sections integrated by compositional disordering of a quantum well
Author :
Hirata, Takaaki ; Maeda, Minoru ; Suehiro, Masayuki ; Hosomatsu, Haruo
Author_Institution :
Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
GaAs-AlGaAs rib-waveguide graded-index separate-confinement heterostructure (GRINSCH) single-quantum-well (SQW) tunable distributed Bragg reflector (DBR) laser diodes were fabricated by EB lithography, ion implantation, and two-step metalorganic vapor phase epitaxy (MOVPE) growth. Active and passive waveguides were monolithically integrated by the compositional disordering of quantum-well heterostructures using silicon ion implantation. First-order gratings and rib waveguides were adopted with EB lithography to improve lasing characteristics, and they have wide application to photonic integrated circuits (PICs). Waveguide losses of partially disordered GRINSCH-SQW passive waveguides were as low as 4.4 cm-1 at the lasing wavelength. A narrow linewidth as low as 560 kHz and a frequency tuning of more than 2.9 THz were obtained. The results show that this fabrication process is useful for PICs
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; electron beam lithography; gallium arsenide; integrated optics; ion implantation; laser tuning; optical losses; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; DBR; GaAs-AlGaAs; GaAs-AlGaAs tunable laser diodes; GaAs:Si-AlGaAs; III-V semiconductor; Si ion implantation; active waveguides; electron beam lithography; fabrication; first order gratings; frequency tuning; ion implantation; lasing characteristics; losses; monolithic integration; narrow linewidth; passive waveguides; phase-control sections; photonic integrated circuits; quantum well compositional disordering; rib waveguide GRINSCH SQW LD; two step MOVPE; Diode lasers; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Ion implantation; Lithography; Optical device fabrication; Quantum well lasers; Tunable circuits and devices; Waveguide components;
Journal_Title :
Quantum Electronics, IEEE Journal of
