Title :
InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths
Author :
Jelen, Christopher ; Slivken, Steven ; Guzman, Vivian ; Razeghi, Manijeh ; Brown, Gail J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
fDate :
10/1/1998 12:00:00 AM
Abstract :
We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively, a 45° facet coupled illumination responsivity of R=0.37 μm and detectivity of Dλ*=3×108 cm·√(Hz)· at T=77 K, for a cutoff wavelength λc=13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27 As-InP heterojunctions
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor heterojunctions; semiconductor quantum wells; 45° facet coupled illumination responsivity; 77 K; 8 to 20 mum; In0.52Ga0.21Al0.27As-InP; InGaAlAs-InP; cutoff wavelengths; detectivity; infrared photodetectors; intersubband photoresponse wavelength; lattice-matched n-doped materials system; long-wavelength quantum-well infrared photodetectors; mole fractions; null conduction band offset; quantum-well infrared photodetectors; Electromagnetic wave absorption; Face detection; Gallium; Indium phosphide; Infrared detectors; Ohmic contacts; Photodetectors; Photonic band gap; Quantum well devices; Quantum wells;
Journal_Title :
Quantum Electronics, IEEE Journal of
