Title :
An optoelectronic switch based on a triangular-barrier structure
Author_Institution :
Dept. of Electron. Eng., Chinese Air Force Acad., Taiwan
fDate :
10/1/1998 12:00:00 AM
Abstract :
A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), is reported in the paper. Owing to the avalanche multiplication and hole confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the current-voltage (I-V) characteristics under both normal and reverse operation modes. The device also showed a flexible optical function related to the potential barrier height controllable by incident light. The dependency of the carrier transport mechanism on illumination, as well as the I-V characteristics at different temperatures, are investigated
Keywords :
III-V semiconductors; electro-optical switches; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optoelectronic devices; semiconductor heterojunctions; semiconductor switches; vapour phase epitaxial growth; GaAs-InGaP; I-V characteristics; S-shaped negative-differential-resistance performances; avalanche multiplication; carrier transport mechanism; current-voltage characteristics; device operation; flexible optical function; hole confinement; incident light; metalorganic chemical vapor deposition; normal operation modes; optoelectronic switch; potential barrier height; reverse operation modes; triangular-barrier optoelectronic switch; triangular-barrier structure; Carrier confinement; Chemical vapor deposition; Gallium arsenide; High speed optical techniques; Lighting control; MOCVD; Optical control; Optical devices; Optical switches; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
