An optoelectronic switch based on a triangular-barrier structure

Author

Guo, Der-Feng

Author_Institution

Dept. of Electron. Eng., Chinese Air Force Acad., Taiwan

Volume

34

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1882

Lastpage

1885

Abstract

A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), is reported in the paper. Owing to the avalanche multiplication and hole confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the current-voltage (I-V) characteristics under both normal and reverse operation modes. The device also showed a flexible optical function related to the potential barrier height controllable by incident light. The dependency of the carrier transport mechanism on illumination, as well as the I-V characteristics at different temperatures, are investigated

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optoelectronic devices; semiconductor heterojunctions; semiconductor switches; vapour phase epitaxial growth; GaAs-InGaP; I-V characteristics; S-shaped negative-differential-resistance performances; avalanche multiplication; carrier transport mechanism; current-voltage characteristics; device operation; flexible optical function; hole confinement; incident light; metalorganic chemical vapor deposition; normal operation modes; optoelectronic switch; potential barrier height; reverse operation modes; triangular-barrier optoelectronic switch; triangular-barrier structure; Carrier confinement; Chemical vapor deposition; Gallium arsenide; High speed optical techniques; Lighting control; MOCVD; Optical control; Optical devices; Optical switches; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.720223

Filename

720223