Picosecond lasing dynamics of gain-switched quantum well lasers and its dependence on quantum well structures

Author

Sogawa, Tetsuomi ; Arakawa, Yasuhiko

Author_Institution

Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1648

Lastpage

1654

Abstract

Time-resolved spectra of GaAs/AlGaAs quantum well (QW) lasers generating picosecond pulses were measured by a streak camera with a monochromator in order to clarify ultrafast lasing dynamics in short pulse generation by a gain switching method. Effects of QW structures (such as the number of quantum wells and the barrier thickness) on picosecond lasing dynamics were investigated. The results show that both generated pulse forms and dynamic behavior of lasing spectra strongly depend on the QW structures. The significance of two-dimensional quantum confinement for high bit rate, short pulse generation is demonstrated by comparing a coupled and an uncoupled QW laser

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; semiconductor junction lasers; time resolved spectra; GaAs-AlGaAs; III-V semiconductor; barrier thickness; coupled QW laser; gain-switched quantum well lasers; high bit rate; monochromator; picosecond lasing dynamics; picosecond pulses; quantum well structures; short pulse generation; streak camera; time resolved spectra; two-dimensional quantum confinement; ultrafast lasing dynamics; uncoupled QW laser; Charge carrier density; Gain measurement; Laser mode locking; Laser theory; Materials science and technology; Optical coupling; Optical pulse generation; Pulse measurements; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89989

Filename

89989