Injection locking in distributed feedback semiconductor lasers

Author

Hui, Rongqing ; D´Ottavi, Alessandro ; Mecozzi, Antonio ; Spano, Paolo

Author_Institution

Fondazione Ugo Bordoni, Rome, Italy

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1688

Lastpage

1695

Abstract

Injection locking properties of distributed feedback semiconductor lasers are studied systematically. Due to the high side mode suppression, these devices show different locking properties when compared to lasers with Fabry-Perot structures. The main result is the identification of four regimes for different injection levels. In particular, a symmetrical locking band at low optical injection level is confirmed. The presence of this symmetrical band can be exploited in some applications. As examples, the measurement of the linewidth enhancement factor and the phase-shift-keying modulation capability are reported

Keywords

distributed feedback lasers; semiconductor junction lasers; distributed feedback semiconductor lasers; high side mode suppression; injection locking; linewidth enhancement factor; low optical injection level; phase-shift-keying modulation capability; symmetrical locking band; Distributed feedback devices; Fabry-Perot; Injection-locked oscillators; Laser feedback; Laser mode locking; Optical feedback; Optical modulation; Phase measurement; Phase shift keying; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89994

Filename

89994