Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers

Author

Bond, Aaron E. ; Dapkus, P.Daniel ; O´Brien, John D.

Author_Institution

Southern California Univ., Los Angeles, CA, USA

Volume

10

Issue

10

fYear

1998

Firstpage

1362

Lastpage

1364

Abstract

A study of the effects of aperture placement on the properties of vertical-cavity surface-emitting lasers (VCSELs) is presented. When thin apertures are placed at the peak of the electric field standing wave optical losses are very high for small apertures. The threshold current increases with decreasing aperture size and two-dimensional diffraction like patterns are evident in the far field. For apertures placed at a node, optical losses appear to be negligible, and loss of optical confinement is apparent for apertures below 2 /spl pi/m.

Keywords

laser cavity resonators; light diffraction; optical losses; oxidation; semiconductor lasers; surface emitting lasers; VCSEL; aperture placement effects; decreasing aperture size; electric field standing wave; far field; node; optical confinement loss; optical losses; oxide-defined vertical-cavity surface-emitting lasers; small apertures; thin apertures; threshold current increase; two-dimensional diffraction like patterns; Apertures; Distributed Bragg reflectors; Gallium arsenide; Optical diffraction; Optical losses; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.720261

Filename

720261