1.5-μm tapered-gain-region lasers with high-CW output powers

Author

Donnelly, J.P. ; Walpole, J.N. ; Groves, S.H. ; Bailey, R.J. ; Missaggia, L.J. ; Napoleone, A. ; Reeder, R.E. ; Cook, C.C.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

10

Issue

10

fYear

1998

Firstpage

1377

Lastpage

1379

Abstract

High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-μm InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of >1 W with /spl ap/80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical self-focusing; quantum well lasers; ridge waveguides; waveguide lasers; 1 W; 1.5 mum; InGaAsP-InP; InGaAsP-InP multiple-quantum-well material; continuous-wave output powers; device parameters; far field; high current densities; high intensity input; high-CW output powers; high-power diode lasers; near-diffraction-limited central lobe; self-focusing; taper section; tapered-gain-region lasers; waveguide section; Current density; Etching; Gas lasers; Laser modes; Optical coupling; Optical materials; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.720266

Filename

720266