Title :
67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs
Author :
Washio, Katsuyoshi ; Hayami, Reiko ; Ohue, Eiji ; Oda, Katsuya ; Tanabe, Masamichi ; Shimamoto, Hiromi ; Kondo, Masao
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
1/1/2001 12:00:00 AM
Abstract :
A 67-GHz 1/4 static frequency divider using 0.2-μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors, with a 122-GHz cutoff frequency, a 163-GHz maximum oscillation frequency, and an average emitter coupled logic gate delay time of 5.65 ps, was developed. The pretracking master-slave toggle flip-flop (MS-TFF) of the divider increases the maximum operating frequency to about 15% higher than that of a conventional MS-TFF, yet the power consumption of the divider is 175 mW, which is 1/5 that of comparable dividers, at a supply voltage of -5.2 V
Keywords :
Ge-Si alloys; bipolar logic circuits; delays; emitter-coupled logic; flip-flops; frequency dividers; heterojunction bipolar transistors; logic gates; semiconductor materials; -5.2 V; 0.2 micron; 122 GHz; 163 GHz; 175 mW; 5.65 ps; 67 GHz; SiGe; average emitter coupled logic gate delay time; cutoff frequency; maximum operating frequency; maximum oscillation frequency; power consumption; pretracking master-slave toggle flip-flop; selective-epitaxial-growth devices; self-aligned HBTs; static frequency divider; supply voltage; Cutoff frequency; Delay effects; Energy consumption; Flip-flops; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Logic gates; Master-slave; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
