Title :
Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention
Author :
Tsai, C.Y. ; Lee, T.H. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/1/2011 12:00:00 AM
Abstract :
We have fabricated the TaN-[SiO2-LaAlO3]-HfON-[LaAlO3-SiO2]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated reten tion window at 125°C, and a 5.5-V endurance window at 106 cycles were measured under very fast 100-μs and low ±16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were sig nificantly better than those of the control device without ion implantation.
Keywords :
arsenic; elemental semiconductors; flash memories; hafnium compounds; lanthanum compounds; silicon; silicon compounds; tantalum compounds; TaN-(SiO2-LaAlO3)-HfON:As-(LaAlO3-SiO2)-Si; arsenic-implanted charge-trapping flash memory; endurance window; extrapolated retention window; memory window; temperature 125 degC; time 100 mus; trapping layer; voltage 4.3 V; voltage 5.5 V; voltage 6.4 V; Charge-trapping Flash (CTF); HfON; ion implant; nonvolatile memory (NVM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2100019
