• DocumentCode
    1433109
  • Title

    Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention

  • Author

    Tsai, C.Y. ; Lee, T.H. ; Chin, Albert

  • Author_Institution
    Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    381
  • Lastpage
    383
  • Abstract
    We have fabricated the TaN-[SiO2-LaAlO3]-HfON-[LaAlO3-SiO2]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated reten tion window at 125°C, and a 5.5-V endurance window at 106 cycles were measured under very fast 100-μs and low ±16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were sig nificantly better than those of the control device without ion implantation.
  • Keywords
    arsenic; elemental semiconductors; flash memories; hafnium compounds; lanthanum compounds; silicon; silicon compounds; tantalum compounds; TaN-(SiO2-LaAlO3)-HfON:As-(LaAlO3-SiO2)-Si; arsenic-implanted charge-trapping flash memory; endurance window; extrapolated retention window; memory window; temperature 125 degC; time 100 mus; trapping layer; voltage 4.3 V; voltage 5.5 V; voltage 6.4 V; Charge-trapping Flash (CTF); HfON; ion implant; nonvolatile memory (NVM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2100019
  • Filename
    5699333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1433109