Multifunctional Field-Effect Transistor for High-Density Integrated Circuits

A multifunctional field-effect transistor (FET) for the manufacturing of high-density integrated circuits (ICs) has been developed and fabricated. Furthermore, an extensive numerical device simulation campaign has been carried out in order to characterize the new structure. Such device is a metal-oxide-semiconductor (MOS) FET that simultaneously performs the functions of two traditional FETs (an n-channel MOS and a p-channel MOS), working as one or as the other according to the voltage applied to the gate´s terminal. Combinational and sequential circuits employing the new technology introduce, with respect to the standard complementary MOS (CMOS) ones, a drastic reduction of both the required device number and the parasitic capacitances. This leads to a significant increase in the circuit´s speed. Furthermore, the ICs obtained with these transistors are fully compatible with the standard CMOS technology and fabrication process.