DocumentCode
1433155
Title
EUV and Soft X-Ray Quantum Efficiency Measurements of a Thinned Back-Illuminated CMOS Active Pixel Sensor
Author
Stern, Robert A. ; Shing, Lawrence ; Waltham, Nick ; Mapson-Menard, Helen ; Harris, Andrew ; Pool, Peter
Author_Institution
Solar & Astrophys. Lab., Lockheed Martin Adv. Technol. Center, Palo Alto, CA, USA
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
354
Lastpage
356
Abstract
We report the first absolute effective quantum efficiency (e-h pairs collected/predicted) measurements of a monolithic thinned back-illuminated CMOS active pixel sensor (APS) in the extreme ultraviolet and soft X-ray region (13-600 Å). The sensor was designed and fabricated under a joint Rutherford Appleton Laboratory/e2v research program and characterized in the Lockheed Martin Solar and Astrophysics calibration facility. We compare our QE results to the data and models developed for thinned CCDs with similar back surface passivation. Our results demonstrate that CMOS APS arrays show significant promise for use in space-based solar physics and astrophysics missions.
Keywords
CMOS image sensors; ion implantation; laser beam annealing; EUV; soft X-ray quantum efficiency measurements; thinned back-illuminated CMOS active pixel sensor; Active pixel sensors (APSs); X-ray astronomy detectors; image sensors; ultraviolet detectors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2100362
Filename
5699340
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