Title :
Novel Nanophase-Switching ESD Protection
Author :
Lin, Lin ; Zhang, Lijie ; Wang, Xin ; Liu, Jian ; Zhao, Hui ; Tang, He ; Fang, Qiang ; Shi, Zitao ; Wang, Albert ; Huang, Ru ; Cheng, Yuhua
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
This letter reports the proof-of-concept results for the new nontraditional nanophase-switching electrostatic-discharge (ESD) protection mechanism and nanocrossbar ESD structures. Experiment shows good ESD switching and protection, i.e., a fast response of 100 ps, a ultralow leakage of 0.26 pA, and an ESD protection of >; 267 V/μm2. A new dispersed local ESD tunneling model is proposed, and heterogeneous complementary metal-oxide-semiconductor integration is developed.
Keywords :
CMOS integrated circuits; electrostatic discharge; nanoelectronics; switching; dispersed local ESD tunneling model; electrostatic-discharge protection; heterogeneous complementary MOS integration; nanocrossbar ESD structures; nanophase-switching ESD protection; ultralow leakage; Electrostatic discharge (ESD); nanocrossbar; nanophase switching (NPS);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2099100
